NTD Silicon Irradiation
Overview
Semiconductors have had an immeasurable impact on our society. Anything that's computerised or uses radio waves depends on semiconductors, which are largely silicon based.
Adding 'dopant' gradually turns a silicon crystal from a good insulator into a viable conductor -- hence the name "semiconductor."
Neutron Transmutation Doping (NTD) can be used to dope silicon by changing silicon atoms into phosphorous with neutron radiation. NTD doping is superior in its controllability and homogeneity, and is widely used by the semiconductor manufacturing industry in development of high power devices.
ANSTO NTD Silicon Irradiation Capability
ANSTO's silicon irradiation services will offer:
- High Cd ratio: minimal damage to crystal during irradiation
- High irradiation capacity: quick turnaround
- High accuracy: error less than +/-5%*
- High flexibility: wide range of target resistivity and sample size
- High quality: AS/NZS ISO 9001:2000 certification
Design Specifications
- Capacity: Six vertical irradiation facilities
- Max sample size: Diameter - 200 mm (8"), length - 600 mm
- Cd ratio: > 400*
- Thermal flux: 2.5E+12 to 1.4E+13 n/cm2 x sec*
- Location: D20 reflector vessel
- Irradiation conditions: unsealed can in a rotating rig.
- Cooling: downward water flow
- Loading/unloading: possible during reactor operation at nominal power
For Further information contact:
Tatiana (Tanya) Karma
Leader, ANSTO Silicon Irradiations
T +61 2 9717 3282
* The OPAL silicon irradiation facilities are currently being commissioned and these values are estimates to be confirmed.